Umgomo wokukhiqizwa kwamandla elanga

Ilanga likhanya ekuxhumaneni kwe-PN ye-semiconductor, lakha umbhangqwana omusha we-hole-electron. Ngaphansi kwesenzo sensimu kagesi ye-PN junction, umgodi ugeleza usuka esifundeni se-P uye esifundeni se-N, bese i-electron igeleza isuka esifundeni se-N iye esifundeni se-P. Uma isekethe ixhunyiwe, ugesi uyakhiwa. Yileyo ndlela amaseli elanga asebenza ngayo.

Ukukhiqizwa kwamandla elanga Kunezinhlobo ezimbili zokukhiqizwa kwamandla elanga, enye imodi yokuguqulwa kokukhanya-ukushisa-ugesi, enye imodi yokuguqulwa kokukhanya-ugesi ngqo.

(1) Indlela yokuguqula ukukhanya-ukushisa-ugesi isebenzisa amandla okushisa akhiqizwa imisebe yelanga ukuze ikhiqize ugesi. Ngokuvamile, amandla okushisa adonswayo aguqulwa abe umusi wendawo yokusebenza yi-solar collector, bese i-turbine yomusi iqhutshwa ukuze ikhiqize ugesi. Inqubo yokuqala inqubo yokuguqula ukukhanya-ukushisa; Inqubo yokugcina inqubo yokuguqula ukushisa-ugesi.

(2) Umphumela we-photoelectric usetshenziselwa ukuguqula amandla emisebe yelanga ngqo abe amandla kagesi. Idivayisi eyisisekelo yokuguqulwa kwe-photoelectric yiseli yelanga. Iseli yelanga iyidivayisi eguqula ngqo amandla okukhanya kwelanga abe amandla kagesi ngenxa yomphumela we-volt generation photogeneration. Iyi-photodiode ye-semiconductor. Lapho ilanga likhanya kwi-photodiode, i-photodiode izoguqula amandla okukhanya kwelanga abe amandla kagesi futhi ikhiqize ugesi. Lapho amaseli amaningi exhunywe ngokulandelana noma ngokuhambisana, kungakhiwa uhlu oluyisikwele lwamaseli elanga anamandla amakhulu okukhipha.

Njengamanje, i-silicon ekristalu (kufaka phakathi i-polysilicon kanye ne-silicon e-monocrystalline) iyinto ebaluleke kakhulu ye-photovoltaic, isabelo sayo semakethe singaphezu kuka-90%, futhi esikhathini esizayo isikhathi eside sizobe sisalokhu siyizinto eziyinhloko zamaseli elanga.

Sekuyisikhathi eside, ubuchwepheshe bokukhiqiza bezinto ze-polysilicon bulawulwa yizimboni eziyi-10 zezinkampani eziyi-7 emazweni amathathu, njenge-United States, iJapani neJalimane, okwakha ukuvinjelwa kobuchwepheshe kanye nokulawula imakethe.

Isidingo se-polysilicon sivela kakhulu kuma-semiconductor namaseli elanga. Ngokwezidingo ezahlukene zokuhlanzeka, ezihlukaniswe ngezinga le-elekthronikhi kanye nezinga lelanga. Phakathi kwazo, i-polysilicon yezinga le-elekthronikhi ingama-55%, i-polysilicon yezinga lelanga ingama-45%.

Ngokuthuthuka okusheshayo kwemboni ye-Photovoltaic, isidingo se-polysilicon kumaseli elanga sikhula ngokushesha kunokuthuthukiswa kwe-semiconductor polysilicon, futhi kulindeleke ukuthi isidingo se-solar polysilicon sizodlula ese-electronic-grade polysilicon ngo-2008.

Ngo-1994, ukukhiqizwa okuphelele kwamaseli elanga emhlabeni kwakuyi-69MW kuphela, kodwa ngo-2004 kwakucishe kube yi-1200MW, ukwanda okuphindwe ka-17 eminyakeni eyi-10 kuphela. Ochwepheshe babikezela ukuthi imboni ye-photovoltaic yelanga izodlula amandla enuzi njengomunye wemithombo yamandla eyisisekelo ebaluleke kakhulu engxenyeni yokuqala yekhulu lama-21.